Magnetic Random Access Memory (MRAM) is an advanced non-volatile storage technology that utilizes Magnetic Tunnel Junction (MTJ) as the basic storage unit. By adjusting the direction of the magnetic moment to switch between high and low resistance states of the storage unit, MRAM can achieve "0" and "1" storage of data. Unlike traditional memory devices that rely on charge to hold data, such as DRAM and Flash, MRAM is known for its high speed, low power consumption, high rewrite count, and strong anti-interference ability in radiation and harsh environments.
 

In recent years, spin transfer torque magnetic random access memory (STT-MRAM) has been commercialized. STT-MRAM uses spin transfer torque effect to change the magnetization direction of the magnetic layer through spin polarization current, thereby completing data writing. At present, this technology has shown great potential for application in civilian fields such as intelligent Internet of Things, industrial control, and vehicle electronics.
 

Spin orbit torque magnetic random access memory (SOT-MRAM) is an important advancement in STT-MRAM technology. It adopts a new writing mechanism - spin orbit torque effect, which shortens the writing speed from 10-50 nanoseconds of STT-MRAM to about 2 nanoseconds. At the same time, under the same working conditions, the power consumption is reduced to one thousandth of the original, and the number of rewrites is almost infinite. However, due to the limitations of key issues such as low bit yield, SOT-MRAM has not yet met the conditions for commercialization.

Keywords:  MRAM
 

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